Third generation semiconductors for piezotronics and piezo-phototronics,such as Zn O and Ga N,have both piezoelectric and semiconducting properties.Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions,contacts and interfaces.The distribution width of piezoelectric charges in a junction is one of important parameters.Capacitance-voltage(C-V)characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges.Piezotronic metal–insulator-semiconductor(MIS)has been modelled by analytical solutions and numerical simulations in this paper,which can serve as guidance for C-V measurements and experimental designs of piezotronic devices.
